onsemi Dual 65V 100mA 100MHz Bipolar Transistor SBC846BDW1T1G

Description
Dual NPN BJT, 65V VCEO, 100mA IC, 100MHz, SOT-363-6 Product overview: SBC846BDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC846BDW1T1G can be used for catalog matching and distributor lookup.
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Description
Dual NPN BJT, 65V VCEO, 100mA IC, 100MHz, SOT-363-6 Product overview: SBC846BDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC846BDW1T1G can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
Dual 65V 100mA 100MHz Bipolar Transistor
277-SBC846BDW1T1G
Dual 65V 100mA 100MHz Bipolar Transistor 277-SBC846BDW1T1G
Dual NPN BJT, 65V VCEO, 100mA IC, 100MHz, SOT-363-6 Product overview: SBC846BDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC846BDW1T1G can be used for catalog matching and distributor lookup.

Dual NPN BJT, 65V VCEO, 100mA IC, 100MHz, SOT-363-6 Product overview: SBC846BDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC846BDW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - SBC846BDW1T1G - 1094527-SBC846BDW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - SBC846BDW1T1G
1094527-SBC846BDW1T1G
TRANSISTORS - Transistors (BJT) - Arrays - SBC846BDW1T1G 1094527-SBC846BDW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 1094527-SBC846BDW1T1 G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 65V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 5V Maximum Power Dissipation: 380mW Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1094527-SBC846BDW1T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 380mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - SBC846BDW1T1G - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon

Supplier's Site Datasheet
Bipolar Transistor Arrays - SBC846BDW1T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SBC846BDW1T1GOSDKR-ND
Bipolar Transistor Arrays SBC846BDW1T1GOSDKR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays - SBC846BDW1T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SBC846BDW1T1GOSTR-ND
Bipolar Transistor Arrays SBC846BDW1T1GOSTR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays - SBC846BDW1T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SBC846BDW1T1GOSCT-ND
Bipolar Transistor Arrays SBC846BDW1T1GOSCT-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays - SBC846BDW1T1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
SBC846BDW1T1G
Bipolar Transistor Arrays SBC846BDW1T1G
TRANS 2NPN 65V 0.1A SC88/SC70-6

TRANS 2NPN 65V 0.1A SC88/SC70-6

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
SBC846BDW1T1G
Bipolar Transistors - BJT SBC846BDW1T1G
Bipolar Transistors - BJT SS DUAL NP XSTR GP

Bipolar Transistors - BJT SS DUAL NP XSTR GP

Buy Now Datasheet
Trans, Aec-Q101, Npn, 65V, 0.1A, Sot-363; Transistor Polarity Onsemi - 97Y9492 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Aec-Q101, Npn, 65V, 0.1A, Sot-363; Transistor Polarity Onsemi
97Y9492
Trans, Aec-Q101, Npn, 65V, 0.1A, Sot-363; Transistor Polarity Onsemi 97Y9492
TRANS, AEC-Q101, NPN, 65V, 0.1A, SOT-363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes

TRANS, AEC-Q101, NPN, 65V, 0.1A, SOT-363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SBC846BDW1T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SBC846BDW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SBC846BDW1T1G
TRANS 2NPN 65V 0.1A SC88/SC70-6

TRANS 2NPN 65V 0.1A SC88/SC70-6

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Rochester Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 277-SBC846BDW1T1G 1094527-SBC846BDW1T1G SBC846BDW1T1G SBC846BDW1T1GOSDKR-ND SBC846BDW1T1G SBC846BDW1T1G 97Y9492 SBC846BDW1T1G
Product Name Dual 65V 100mA 100MHz Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays - SBC846BDW1T1G Bipolar Transistor Arrays Bipolar Transistor Arrays Bipolar Transistors - BJT Trans, Aec-Q101, Npn, 65V, 0.1A, Sot-363; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; 2 NPN (Dual) NPN NPN 2 NPN (Dual); NPN NPN
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 65 volts 65 volts 65 volts
VCBO 80 volts
fT 100 MHz
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