Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN BJT, 65V VCEO, 100mA IC, 100MHz, SOT-363-6 Product overview: SBC846BDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC846BDW1T1G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Manufacturer: ON Semiconductor
Win Source Part Number: 1094527-SBC846BDW1T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 380mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
TRANS 2NPN 65V 0.1A SC88/SC70-6
TRANS, AEC-Q101, NPN, 65V, 0.1A, SOT-363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes
Bipolar Transistors - BJT SS DUAL NP XSTR GP
TRANS 2NPN 65V 0.1A SC88/SC70-6
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | SBC846BDW1T1G | 277-SBC846BDW1T1G | SBC846BDW1T1GOSDKR-ND | 1094527-SBC846BDW1T1G | SBC846BDW1T1G | 97Y9492 | SBC846BDW1T1G | SBC846BDW1T1G |
| Product Name | Dual 65V 100mA 100MHz Bipolar Transistor | Bipolar Transistor Arrays | TRANSISTORS - Transistors (BJT) - Arrays - SBC846BDW1T1G | Bipolar Transistor Arrays | Trans, Aec-Q101, Npn, 65V, 0.1A, Sot-363; Transistor Polarity Onsemi | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | NPN | NPN | NPN; 2 NPN (Dual) | 2 NPN (Dual); NPN | NPN | ||
| Package Type | SC-88-6-EUT-CPR | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 | TO-3; SOT3 | AEC-Q101 | ||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||
| VCEO | 65 volts | 65 volts | 65 volts |
