Dual NPN BJT, 65V VCEO, 100mA IC, 100MHz, SOT-363-6 Product overview: SBC846BDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC846BDW1T1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1094527-SBC846BDW1T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 65V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 380mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
TRANS 2NPN 65V 0.1A SC88/SC70-6
Bipolar Transistors - BJT SS DUAL NP XSTR GP
TRANS, AEC-Q101, NPN, 65V, 0.1A, SOT-363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes
TRANS 2NPN 65V 0.1A SC88/SC70-6
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 277-SBC846BDW1T1G | 1094527-SBC846BDW1T1G | SBC846BDW1T1G | SBC846BDW1T1GOSDKR-ND | SBC846BDW1T1G | SBC846BDW1T1G | 97Y9492 | SBC846BDW1T1G |
| Product Name | Dual 65V 100mA 100MHz Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays - SBC846BDW1T1G | Bipolar Transistor Arrays | Bipolar Transistor Arrays | Bipolar Transistors - BJT | Trans, Aec-Q101, Npn, 65V, 0.1A, Sot-363; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | NPN; 2 NPN (Dual) | NPN | NPN | 2 NPN (Dual); NPN | NPN | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||
| VCEO | 65 volts | 65 volts | 65 volts | |||||
| VCBO | 80 volts | |||||||
| fT | 100 MHz |
