Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFF9250L SFF9250L

The SFF9250L is a P-channel power MOSFET designed for high-voltage switching applications, featuring a drain-source breakdown voltage of -200 V and a continuous drain current of -12.6 A at 25 °C. It is packaged in a TO-3PF case with three leads and uses a through-hole mounting style. The device has a typical on-state resistance of 0.175 Ω at -5 V gate-source voltage and -6.3 A drain current, along with a total gate charge of 90 nC. It incorporates avalanche rugged technology, rugged gate oxide technology, and an extended safe operating area. The operating junction and storage temperature range is -55 °C to +150 °C. The part meets the AEC-Q200 automotive qualification standard and is RoHS compliant. The thermal resistance junction-to-case is 0.61 °C/W, and the total power dissipation at 25 °C case temperature is 90 W.