Renesas Electronics Corporation Single FETs, MOSFETs RJK1003DPP-E0#T2

Description
Power Field-Effect Transistor
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Description
Power Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - RJK1003DPP-E0#T2 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Single FETs, MOSFETs - RJK1003DPP-E0#T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RJK1003DPP-E0#T2-ND
Single FETs, MOSFETs RJK1003DPP-E0#T2-ND
N-Channel 100V 50A (Ta) 25W (Tc) Through Hole TO-220FP

N-Channel 100V 50A (Ta) 25W (Tc) Through Hole TO-220FP

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1088471-RJK1003DPP-E0#T2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1088471-RJK1003DPP-E0#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1088471-RJK1003DPP-E0#T2
Win Source Part Number: 1088471-RJK1003DPP-E 0#T2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 25W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C Alternative Parts (Cross-Reference): IRFI4410ZPBF; STF80N10F7; STF100N10F7; STF120NF10; IRFB7746PBF; FDPF085N10ARJK1003DP P-E0(#T2); ECCN: EAR99 Fake Threat In the Open Market: 47 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Renesas Other Names: 2156-RJK1003DPP-E0#T 2 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: RoHS non-compliant

Win Source Part Number: 1088471-RJK1003DPP-E0#T2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 25W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C
Alternative Parts (Cross-Reference): IRFI4410ZPBF; STF80N10F7; STF100N10F7; STF120NF10; IRFB7746PBF; FDPF085N10ARJK1003DPP-E0(#T2);
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Renesas
Other Names: 2156-RJK1003DPP-E0#T2
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: RoHS non-compliant

Buy Now
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJK1003DPP-E0#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJK1003DPP-E0#T2
RJK1003DPP - N-CHANNEL MOSFET 10

RJK1003DPP - N-CHANNEL MOSFET 10

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number RJK1003DPP-E0#T2 RJK1003DPP-E0#T2-ND 1088471-RJK1003DPP-E0#T2 RJK1003DPP-E0#T2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TO-220; TO-220FP TO-220; TO-220-3 Full Pack TO-220; SOT3 Through Hole
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