Dual N-channel power MOSFET with integrated Schottky barrier diode for high-speed switching, housed in a WPAK-D(3) package measuring 9.5 mm × 5.1 mm × 1.6 mm. MOS1 has a drain-source voltage rating of 30 V, continuous drain current of 20 A, and on-resistance of 7.0 mΩ max at 10 V gate drive; MOS2 has 50 A continuous current and 2.2 mΩ max on-resistance. Both support 4.5 V gate drive, operate up to 150°C channel temperature, and meet Pb-free and halogen-free standards. The part is qualified for automotive use under AEC-Q200.
Power Field-Effect Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJK03P9DPA-00#J5A |
| Package Type | WPAK8 |
