Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK1536DPE-00#J3 RJK1536DPE-00#J3

RJK1536DPE is an N-channel power MOSFET designed for high-speed switching applications such as motor control, lighting control, solenoid control, and DC-DC conversion. It is packaged in an LDPAK(S)-(1) case with dimensions of 10.2 mm × 6.8 mm and weighs 1.30 g. The device has a drain-to-source voltage rating of 150 V, a continuous drain current of 50 A, and a maximum pulsed drain current of 100 A. The static drain-to-source on-state resistance is specified at a maximum of 30 mΩ at 25 A and 10 V gate-source voltage. It supports a maximum channel dissipation of 125 W with a thermal impedance of 1.0 °C/W. The gate-to-source voltage rating is ±20 V, and the storage temperature range is -55 °C to +150 °C.