Renesas Electronics Corporation RJK5012DPP-00#T2

RJK5012DPP is a silicon N-channel MOSFET designed for high-speed power switching, housed in a TO-220FN package with dimensions conforming to JEITA code PRSS0003AB-A and a mass of 2.0 g. It features a drain-to-source voltage rating of 500 V, a continuous drain current of 12 A, and a pulsed drain current of 24 A. The device has a maximum on-resistance of 0.620 Ω at 10 V gate drive and 6 A drain current, with a channel-to-case thermal impedance of 4.17 °C/W. The gate-to-source voltage is limited to ±30 V, and the channel temperature rating is 150 °C. The device meets RoHS standards and is categorized as standard quality per Renesas' product grading.