The RJK6009DPP is a silicon N-channel MOS FET designed for high-speed power switching in standard industrial and consumer applications. It is packaged in a TO-220FN (RENESAS code PRSS0003AB-A) with dimensions of 10 mm × 5.6 mm and a mass of 2.0 g. The device has a drain-source voltage rating of 600 V, continuous drain current of 18 A, and peak pulsed drain current of 54 A. Static drain-source on-resistance is specified at 0.392 Ω typ. at 9 A and 10 V gate-source voltage. It features a channel-to-case thermal impedance of 3.125 °C/W and operates with a maximum channel temperature of 150 °C. The part meets RoHS compliance and is classified as 'Standard' quality per Renesas guidelines. The switching timing characteristics include a turn-on delay of 35 ns, rise time of 28 ns, turn-off delay of 99 ns, and fall time of 18 ns under specified test conditions.
Power Field-Effect Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJK6009DPP-00#T2 |
| Package Type | TO-220; TO-220-3FP |
