The RJK60S5DPE is a 600V, 20A superjunction MOSFET in an LDPAK(S)-(1) package, designed for high-speed power switching. It has a typical on-resistance of 0.150 Ω at 10 A and 10 V gate-source voltage, with a maximum channel temperature of 150°C and thermal impedance of 1.0 °C/W. The device supports avalanche energy up to 1.36 mJ and dv/dt ruggedness of 150 V/ns. It meets RoHS standards and is rated for operation from -55°C to 150°C storage temperature. The package dimensions are 10.2 mm × 6.8 mm × 1.37 mm, with a mass of 1.30 g.
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJK60S5DPE-00#J3 |
| Polarity | N-Channel |
