The RJP30E2DPK-M0 is a silicon N-channel IGBT designed for high-speed power switching, housed in a TO-3PSG package measuring 38.3 mm × 15.6 mm × 4.8 mm with a mass of 3.7 g. It has a collector-emitter voltage rating of 360 V, continuous collector current of 35 A, and peak collector current of 200 A under pulsed conditions. The device exhibits a collector-emitter saturation voltage of 1.7 V typical at 35 A and 15 V gate-emitter voltage. Switching times include a turn-on rise time of 0.1 μs and turn-off fall time of 0.15 μs under specified test conditions. The junction-to-case thermal impedance is 2.5 °C/W, with a maximum junction temperature of 150 °C. The IGBT complies with RoHS standards and is rated for operation from -55 °C to 150 °C storage temperature. The device is classified as 'Standard' quality per Renesas product grading guidelines.
Insulated Gate Bipolar Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | RJP30E2DPK-M0#T0 |
| Package Type | TO-3; TO-3P |
