Renesas Electronics Corporation RJK0701DPP-E0#T2

Description
Power Field-Effect Transistor
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Description
Power Field-Effect Transistor
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Datasheet
Datasheet Summary
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N-Channel MOSFET for high-speed switching applications, packaged in TO-220FP with a body mass of 1.9 g. It features a drain-to-source voltage rating of 75 V, continuous drain current of 100 A, and a typical on-resistance of 3.0 mΩ at V_GS = 10 V. The device meets the AEC-Q200 automotive reliability standard and is RoHS compliant. Thermal resistance from channel to case is 4.17 °C/W, with a maximum channel temperature of 150 °C and an avalanche energy rating of 375 mJ at 25 °C.

Datasheet Summary
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N-Channel MOSFET for high-speed switching applications, packaged in TO-220FP with a body mass of 1.9 g. It features a drain-to-source voltage rating of 75 V, continuous drain current of 100 A, and a typical on-resistance of 3.0 mΩ at V_GS = 10 V. The device meets the AEC-Q200 automotive reliability standard and is RoHS compliant. Thermal resistance from channel to case is 4.17 °C/W, with a maximum channel temperature of 150 °C and an avalanche energy rating of 375 mJ at 25 °C.

Suppliers

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Product
Description
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 - RJK0701DPP-E0#T2 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

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Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number RJK0701DPP-E0#T2
Package Type TO-220; TO-220-3FP
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