onsemi SBC846BLT3

Description
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Request a Quote
Datasheet
Datasheet Summary
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The SBC846BLT3 is an NPN silicon general-purpose transistor in the SOT-23 package, matching the BC846BLT3 variant from the BC846ALT1 series. It has a collector-emitter voltage rating of 65 V, a continuous collector current of 100 mA, and a total device dissipation of 225 mW on FR-5 board. The device features a minimum DC current gain of 200 at IC = 2.0 mA and VCE = 5.0 V, and a collector-emitter saturation voltage of up to 0.6 V at IC = 100 mA and IB = 5.0 mA. The junction and storage temperature range is -55 to +150 °C. It meets moisture sensitivity level 1 and ESD ratings of >4000 V (HBM) and >400 V (MM), and is Pb-free compliant.

Datasheet Summary
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The SBC846BLT3 is an NPN silicon general-purpose transistor in the SOT-23 package, matching the BC846BLT3 variant from the BC846ALT1 series. It has a collector-emitter voltage rating of 65 V, a continuous collector current of 100 mA, and a total device dissipation of 225 mW on FR-5 board. The device features a minimum DC current gain of 200 at IC = 2.0 mA and VCE = 5.0 V, and a collector-emitter saturation voltage of up to 0.6 V at IC = 100 mA and IB = 5.0 mA. The junction and storage temperature range is -55 to +150 °C. It meets moisture sensitivity level 1 and ESD ratings of >4000 V (HBM) and >400 V (MM), and is Pb-free compliant.

Suppliers

Company
Product
Description
Supplier Links
 - SBC846BLT3 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number SBC846BLT3
Polarity NPN
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