Renesas Electronics Corporation RJK0702DPP-E0#T2

N-channel MOSFET for high-speed switching applications in power circuits, packaged in a TO-220FP case measuring 15.36 mm in height and 10.16 mm in width, with a mass of 1.9 g. It has a drain-to-source voltage rating of 75 V, continuous drain current of 90 A, and a typical on-resistance of 3.9 mΩ at 10 V gate-source voltage. The device supports peak drain current up to 270 A under pulsed conditions, with an avalanche energy rating of 304 mJ and a maximum channel dissipation of 30 W. Channel-to-case thermal impedance is 4.17 °C/W. Total gate charge is 89 nC with a gate resistance of 1.5 Ω.