RJK0393DPA is a Silicon N-channel power MOSFET designed for power switching applications, housed in a WPAK package measuring 8.3 mm x 9.5 mm with a height of 1.6 mm max. It features a 30 V drain-source breakdown voltage, 40 A continuous drain current, and a typical on-resistance of 3.3 mΩ at 10 V gate drive. The device supports 4.5 V gate drive operation, has a channel-to-case thermal impedance of 3.13 °C/W, and is rated for operation up to 150 °C. It complies with Pb-free and halogen-free standards. The part meets AEC-Q200 qualification and is supplied in tape packaging.
Power Field-Effect Transistor, MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJK0393DPA-00#J53 |
| Package Type | WPAK8 |
