Manufacturer: Renesas Electronics America
Win Source Part Number: 1092317-RJK6014DPP-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 16A (Ta)
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 575 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
N-Channel 600V 16A (Ta) 35W (Tc) Through Hole TO-220FP
Power Field-Effect Transistor
MOSFET N-CH 600V 16A TO220FP
MOSFET Power TRS, 600V/16A, TO-220FN
| Win Source Electronics | DigiKey | Rochester Electronics | Acme Chip Technology Co., Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1092317-RJK6014DPP-E0#T2 | RJK6014DPP-E0#T2-ND | RJK6014DPP-E0#T2 | RJK6014DPP-E0#T2 | RJK6014DPP-E0#T2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6014DPP-E0#T2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | ||||
| PD | 35000 milliwatts |
