Renesas Electronics Corporation 600V 16A MOSFET Transistor RJK6014DPP-E0#T2

Description
Power Field-Effect Transistor
Request a Quote Datasheet
Description
Power Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - RJK6014DPP-E0#T2 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Singapore
600V 16A MOSFET Transistor
278-RJK6014DPP-E0#T2
600V 16A MOSFET Transistor 278-RJK6014DPP-E0#T2
MOSFET N-CH 600V 16A TO220FP Product overview: RJK6014DPP-E0#T2 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RJK6014DPP-E0#T2 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 16A TO220FP Product overview: RJK6014DPP-E0#T2 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RJK6014DPP-E0#T2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - RJK6014DPP-E0#T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RJK6014DPP-E0#T2-ND
Single FETs, MOSFETs RJK6014DPP-E0#T2-ND
N-Channel 600V 16A (Ta) 35W (Tc) Through Hole TO-220FP

N-Channel 600V 16A (Ta) 35W (Tc) Through Hole TO-220FP

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6014DPP-E0#T2 - 1092317-RJK6014DPP-E0#T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6014DPP-E0#T2
1092317-RJK6014DPP-E0#T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6014DPP-E0#T2 1092317-RJK6014DPP-E0#T2
Manufacturer: Renesas Electronics America Win Source Part Number: 1092317-RJK6014DPP-E 0#T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Ta) Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 575 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1092317-RJK6014DPP-E0#T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 16A (Ta)
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 575 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJK6014DPP-E0#T2 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJK6014DPP-E0#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJK6014DPP-E0#T2
MOSFET N-CH 600V 16A TO220FP

MOSFET N-CH 600V 16A TO220FP

Supplier's Site
MOSFET Power TRS, 600V/16A, TO-220FN

MOSFET Power TRS, 600V/16A, TO-220FN

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Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Acme Chip Technology Co., Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number RJK6014DPP-E0#T2 278-RJK6014DPP-E0#T2 RJK6014DPP-E0#T2-ND 1092317-RJK6014DPP-E0#T2 RJK6014DPP-E0#T2 RJK6014DPP-E0#T2
Product Name 600V 16A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6014DPP-E0#T2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type TO-220; TO-220-3FP Tube TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack
Packing Method Tube; Tube Tube Rail; Tube; Tube/Rail Tube; Tube
PD 35000 milliwatts 35000 milliwatts
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