Renesas Electronics Corporation 600V 35A 30W IGBT Transistor RJH60D3DPP-M0#T2

Description
RJH60 - IGBT Trench 600 V 35 A 40 W Through Hole
Request a Quote Datasheet
Description
RJH60 - IGBT Trench 600 V 35 A 40 W Through Hole
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - RJH60D3DPP-M0#T2 - Rochester Electronics
Newburyport, MA, United States
RJH60 - IGBT Trench 600 V 35 A 40 W Through Hole

RJH60 - IGBT Trench 600 V 35 A 40 W Through Hole

Supplier's Site Datasheet
Singapore
600V 35A 30W IGBT Transistor
279-RJH60D3DPP-M0#T2
600V 35A 30W IGBT Transistor 279-RJH60D3DPP-M0#T2
IGBT 600V 35A 30W TO220FL Product overview: RJH60D3DPP-M0#T2 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 35A, 30W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 35A, 30W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60D3DPP-M0#T2 can be used for catalog matching and distributor lookup.

IGBT 600V 35A 30W TO220FL Product overview: RJH60D3DPP-M0#T2 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 35A, 30W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 35A, 30W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60D3DPP-M0#T2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - RJH60D3DPP-M0#T2 - 1092259-RJH60D3DPP-M0#T2 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - RJH60D3DPP-M0#T2
1092259-RJH60D3DPP-M0#T2
IGBTs - Single - RJH60D3DPP-M0#T2 1092259-RJH60D3DPP-M0#T2
Manufacturer: Renesas Electronics America Win Source Part Number: 1092259-RJH60D3DPP-M 0#T2 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 100ns IGBT Type: Trench Input Type: Standard Gate Charge: 37nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FL Maximum Current Collector: 35A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 40W Collector-emitter saturation voltage(Max): 2.2V @ 15V, 17A Total Switching Energy(Ets): 200μJ (on), 210μJ (off) Turn-on and Turn-off delay time: 35ns/80ns Testing Conditions: 300V, 17A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1092259-RJH60D3DPP-M0#T2
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 100ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 37nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FL
Maximum Current Collector: 35A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 40W
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 17A
Total Switching Energy(Ets): 200μJ (on), 210μJ (off)
Turn-on and Turn-off delay time: 35ns/80ns
Testing Conditions: 300V, 17A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - RJH60D3DPP-M0#T2-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench 600V 35A 40W Through Hole TO-220FL

IGBT Trench 600V 35A 40W Through Hole TO-220FL

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - RJH60D3DPP-M0#T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
RJH60D3DPP-M0#T2
Discrete Semiconductor Products - Transistors - IGBTs RJH60D3DPP-M0#T2
IGBT 600V 35A 30W TO220FL

IGBT 600V 35A 30W TO220FL

Supplier's Site

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number RJH60D3DPP-M0#T2 279-RJH60D3DPP-M0#T2 1092259-RJH60D3DPP-M0#T2 RJH60D3DPP-M0#T2-ND RJH60D3DPP-M0#T2
Product Name 600V 35A 30W IGBT Transistor IGBTs - Single - RJH60D3DPP-M0#T2 Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
Package Type TO-220; TO-220-3 Tube TO-220; SOT3; TO-220FL TO-220; TO-220-3 Full Pack
Packing Method Tube; Tube Tube Rail; Tube; Tube/Rail Tube Tube; Tube
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
Unlock Full Specs
to access all available technical data