Renesas Electronics Corporation 1100V 55A 227.2W IGBT Transistor RJH1BF6RDPQ-80#T2

IGBT 1100V 55A 227.2W TO247 Product overview: RJH1BF6RDPQ-80#T2 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1100V, 55A, 227.2W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1100V, 55A, 227.2W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH1BF6RDPQ-80#T2 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1088443-RJH1BF6RDPQ-80#T2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Bulk
Standard Package: 1
Power - Max: 227.2 W
Voltage - Collector Emitter Breakdown (Max): 1100 V
Current - Collector (Ic) (Max): 55 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): IRG7PH35UPBF; IRG7PG35UPBF; IRG7PG35U-EPBF; IRG7PH35U-EP; IRG4PH40UPBF; FGA20N120FTDTU;
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Mfr: Renesas Electronics America Inc
Other Names: 2156-RJH1BF6RDPQ-80#T2,RENRNSRJH1BF6RDPQ-80#T2
RoHS Status: Not applicable

Insulated Gate Bipolar Transistor

IGBT 1100V 55A 227.2W Through Hole TO-247