Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single RJK5013DPP-00#T2

Description
Power Field-Effect Transistor
Request a Quote Datasheet
Description
Power Field-Effect Transistor
Request a Quote Datasheet

Suppliers

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Product
Description
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 - RJK5013DPP-00#T2 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1028514-RJK5013DPP-00#T2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1028514-RJK5013DPP-00#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1028514-RJK5013DPP-00#T2
Win Source Part Number: 1028514-RJK5013DPP-0 0#T2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 465mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 30W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FN Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: 150°C ECCN: EAR99 Fake Threat In the Open Market: 79 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Renesas Other Names: 2156-RJK5013DPP-00#T 2 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: RoHS non-compliant

Win Source Part Number: 1028514-RJK5013DPP-00#T2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 465mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 30W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FN
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Renesas
Other Names: 2156-RJK5013DPP-00#T2
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: RoHS non-compliant

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Technical Specifications

  Rochester Electronics Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number RJK5013DPP-00#T2 1028514-RJK5013DPP-00#T2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Package Type TO-220; TO-220-3 TO-220; SOT3
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