Power Field-Effect Transistor
Win Source Part Number: 1028514-RJK5013DPP-0
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 465mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 30W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FN
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Renesas
Other Names: 2156-RJK5013DPP-00#T
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: RoHS non-compliant
| Rochester Electronics | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RJK5013DPP-00#T2 | 1028514-RJK5013DPP-00#T2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | |
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 |