Renesas Electronics Corporation Single FETs, MOSFETs RJK1001DPP-E0#T2

Description
Power Field-Effect Transistor
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Description
Power Field-Effect Transistor
Request a Quote Datasheet

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Product
Description
Supplier Links
 - RJK1001DPP-E0#T2 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Single FETs, MOSFETs - RJK1001DPP-E0#T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RJK1001DPP-E0#T2-ND
Single FETs, MOSFETs RJK1001DPP-E0#T2-ND
N-Channel 100V 80A (Ta) 30W (Tc) Through Hole TO-220FP

N-Channel 100V 80A (Ta) 30W (Tc) Through Hole TO-220FP

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK1001DPP-E0#T2 - 793221-RJK1001DPP-E0#T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK1001DPP-E0#T2
793221-RJK1001DPP-E0#T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK1001DPP-E0#T2 793221-RJK1001DPP-E0#T2
Manufacturer: Renesas Electronics America Win Source Part Number: 793221-RJK1001DPP-E0 #T2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Family Name: RJK1001DPP-E0 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220FP Channel Type Type: N Drain Source Voltage: 100V Gate Charge (Qg) (Maximum) @ Vgs: 147nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 10000pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 30W (Tc) Rds On (Maximum) @ Id, Vgs: 5.5 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): IXTC200N10T; STF110N10F7; STF100N10F7; IPA045N10N3 G; Introduction Date: July 09, 2012 ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 793221-RJK1001DPP-E0#T2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Family Name: RJK1001DPP-E0
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220FP
Channel Type Type: N
Drain Source Voltage: 100V
Gate Charge (Qg) (Maximum) @ Vgs: 147nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 10000pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 30W (Tc)
Rds On (Maximum) @ Id, Vgs: 5.5 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IXTC200N10T; STF110N10F7; STF100N10F7; IPA045N10N3 G;
Introduction Date: July 09, 2012
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJK1001DPP-E0#T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJK1001DPP-E0#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJK1001DPP-E0#T2
MOSFET N-CH 100V 80A TO220FP

MOSFET N-CH 100V 80A TO220FP

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number RJK1001DPP-E0#T2 RJK1001DPP-E0#T2-ND 793221-RJK1001DPP-E0#T2 RJK1001DPP-E0#T2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK1001DPP-E0#T2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TO-220; TO-220FP3 TO-220; TO-220-3 Full Pack TO-220; SOT3 TO-220; TO-220-3 Full Pack
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