Power Field-Effect Transistor
Win Source Part Number: 1088455-RJK0390DPA-0
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32.5A, 10V
Power Dissipation (Max): 60W (Tc)
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-WPAK
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 10 V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): FDMS0300S; FDMS7658AS; FDMS0302S; IPB80N03S4L02ATMA1; IPD068P03L3GATMA1; BUK9505-30A,127;
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: 2156-RJK0390DPA-00#J
Product Status: Obsolete
| Rochester Electronics | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RJK0390DPA-00#J5A | 1088455-RJK0390DPA-00#J5A |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | |
| Package Type | WPAK8 | SOT3 |