Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single RJK0390DPA-00#J5A

Description
Power Field-Effect Transistor
Request a Quote Datasheet
Description
Power Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - RJK0390DPA-00#J5A - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1088455-RJK0390DPA-00#J5A - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1088455-RJK0390DPA-00#J5A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1088455-RJK0390DPA-00#J5A
Win Source Part Number: 1088455-RJK0390DPA-0 0#J5A Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32.5A, 10V Power Dissipation (Max): 60W (Tc) Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-WPAK Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 10 V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): FDMS0300S; FDMS7658AS; FDMS0302S; IPB80N03S4L02ATMA1; IPD068P03L3GATMA1; BUK9505-30A,127; ECCN: EAR99 Fake Threat In the Open Market: 64 pct. HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: 2156-RJK0390DPA-00#J 5A-RETR,RENRNSRJK039 0DPA-00#J5A Product Status: Obsolete

Win Source Part Number: 1088455-RJK0390DPA-00#J5A
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32.5A, 10V
Power Dissipation (Max): 60W (Tc)
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-WPAK
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 10 V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): FDMS0300S; FDMS7658AS; FDMS0302S; IPB80N03S4L02ATMA1; IPD068P03L3GATMA1; BUK9505-30A,127;
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: 2156-RJK0390DPA-00#J5A-RETR,RENRNSRJK0390DPA-00#J5A
Product Status: Obsolete

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Technical Specifications

  Rochester Electronics Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number RJK0390DPA-00#J5A 1088455-RJK0390DPA-00#J5A
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Package Type WPAK8 SOT3
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