Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0301DPB-00#J0 RJK0301DPB-00#J0

Manufacturer: Renesas Electronics America
Win Source Part Number: 062526-RJK0301DPB-00#J0
Packaging: Tape and Reel
Type: Power MOSFET
Operating Temp Range: -55C to 150C
Mounting: Surface Mount
Pin Count: 4 +Tab
Operating Temperature Classification: Military
Rad Hardened: No
Package Type: LFPAK
Polarity: N
Number of Elements: 1
Power Dissipation: 65(W)
Noise Figure: Not Required dB
Frequency (Max): Not Required MHz
Continuous Drain Current: 60(A)
Gate-Source Voltage (Max): 16(V)
Channel Mode: Enhancement
Drain-Source On-Volt: 30(V)
Drain-Source On-Res: 0.0028(ohm)
Drain Current (Max): 60 A
Output Power (Max): Not Required W
Drain Efficiency: Not Required %
Power Gain: Not Required dB
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Product overview: RJK0301DPB-00#J0 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RJK0301DPB-00#J0 can be used for catalog matching and distributor lookup.

30V, 60A, N-Channel Power MOSFET