Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - IGBTs RJP30H1DPD-A0#Q2

Description
Insulated Gate Bipolar Transistor
  • RJP30H1DPD-A0#Q2 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - RJP30H1DPD-A0#Q2 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Insulated Gate Bipolar Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- RJP30H1DPD-A0#Q2 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
RJP30H1DPD-A0#Q2
RJP30H1DPD-A0#Q2
Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - RJP30H1DPD-A0#Q2 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - IGBTs
RJP30H1DPD-A0#Q2
Discrete Semiconductor Products - Transistors - IGBTs RJP30H1DPD-A0#Q2
IGBT

IGBT

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number RJP30H1DPD-A0#Q2 RJP30H1DPD-A0#Q2
Product Name Discrete Semiconductor Products - Transistors - IGBTs
Package Type DAPAK3
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