The RFP50N06 is an N-channel power MOSFET in a TO-220AB package, rated for 60V drain-to-source voltage and 50A continuous drain current, with a maximum on-resistance of 0.022Ω at VGS=10V. It operates at up to 175°C junction temperature and includes a temperature-compensating PSPICE model. Thermal resistance from junction to case is 1.14°C/W. The device meets the absolute maximum ratings and performance specifications defined for the RFP50N06 series, including an unclamped inductive switching capability and reverse recovery time of 125ns. It is qualified for operation in switching regulators, motor drivers, and relay drivers. The part number RFP50N06_F102 is not listed, but the series is fully described.
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The RFP50N06 is an N-channel power MOSFET in a TO-220AB package, rated for 60V drain-to-source voltage and 50A continuous drain current, with a maximum on-resistance of 0.022Ω at VGS=10V. It operates at up to 175°C junction temperature and includes a temperature-compensating PSPICE model. Thermal resistance from junction to case is 1.14°C/W. The device meets the absolute maximum ratings and performance specifications defined for the RFP50N06 series, including an unclamped inductive switching capability and reverse recovery time of 125ns. It is qualified for operation in switching regulators, motor drivers, and relay drivers. The part number RFP50N06_F102 is not listed, but the series is fully described.
