Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK6009DPP-00#T2 RJK6009DPP-00#T2

The RJK6009DPP is a silicon N-channel MOSFET designed for high-speed power switching applications. It is packaged in a TO-220FN case with dimensions of 10 mm × 2.8 mm and weighs 2.0 g. The device has a drain-source breakdown voltage of 600 V, a continuous drain current rating of 18 A, and a maximum on-resistance of 0.480 Ω at 9 A and 10 V gate-source voltage. It supports a peak drain current of 54 A for pulses up to 10 µs with a 1% duty cycle and features a total gate charge of 54 nC. The channel dissipation is rated at 40 W with a thermal impedance of 3.125 °C/W. The product meets RoHS compliance and is classified as a standard quality grade device, suitable for general industrial and consumer applications.