onsemi SBC807-16LT1

PNP silicon general-purpose transistor in SOT-23 package, rated for a collector-emitter voltage of -45 V, collector current of -500 mA, and total device dissipation of 225 mW on FR-5 board at 25°C. It has a thermal resistance of 556 °C/W and a junction temperature range of -55°C to +150°C. The DC current gain (hFE) is guaranteed between 100 and 250 at IC = -100 mA and VCE = -1.0 V. Capacitance is 10 pF at VCB = 10 V and frequency of 1 MHz. The device meets standard SOT-23 (TO-236AB) package dimensions with a 1.11 mm maximum height, 3.04 mm length, and 1.40 mm width. Marking includes a device code with a date code and an optional "M" for Pb-free. Rated for junction and storage temperature from -55°C to +150°C.