onsemi SBC817-25LT3G-M01

Description
SBC817-25L - General Purpose Transistors NPN Silicon
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Description
SBC817-25L - General Purpose Transistors NPN Silicon
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Datasheet
Datasheet Summary
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SBC817-25LT3G is an NPN silicon general purpose transistor in a SOT-23 package, rated for a collector-emitter voltage of 45 V, a continuous collector current of 500 mA, and a total device dissipation of 225 mW on FR-5 board. It has a DC current gain (hFE) range of 160 to 400 at IC = 100 mA and VCE = 1.0 V, with a collector-emitter saturation voltage of up to 0.7 V at IC = 500 mA and IB = 50 mA. The device is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified with PPAP capability. The package dimensions conform to SOT-23 (TO-236) specifications with a body size of 2.90 mm maximum length and 1.30 mm maximum width.

Datasheet Summary
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SBC817-25LT3G is an NPN silicon general purpose transistor in a SOT-23 package, rated for a collector-emitter voltage of 45 V, a continuous collector current of 500 mA, and a total device dissipation of 225 mW on FR-5 board. It has a DC current gain (hFE) range of 160 to 400 at IC = 100 mA and VCE = 1.0 V, with a collector-emitter saturation voltage of up to 0.7 V at IC = 500 mA and IB = 50 mA. The device is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified with PPAP capability. The package dimensions conform to SOT-23 (TO-236) specifications with a body size of 2.90 mm maximum length and 1.30 mm maximum width.

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 - SBC817-25LT3G-M01 - Rochester Electronics
Newburyport, MA, United States
SBC817-25L - General Purpose Transistors NPN Silicon

SBC817-25L - General Purpose Transistors NPN Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number SBC817-25LT3G-M01
Polarity NPN
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