NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with the base connected to the flange, designed for common base class-C wideband amplifiers under pulsed conditions in L-band radar applications. The device has a maximum collector-base voltage of 65 V, collector-emitter voltage of 60 V, and can handle a pulsed collector current of up to 21 A with 150 μs pulse width and 5% duty cycle. Total power dissipation is rated at 570 W under pulsed conditions with a mounting base temperature of 75 °C. Thermal resistance from junction to mounting base is 0.8 K/W, and junction operating temperature is rated up to 200 °C. The product contains beryllium oxide and must be handled and disposed of as special waste. The part meets IEC 134 for limiting values and is not designed for life support applications.
RX1214B300Y - Microwave Power Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RX1214B300YI |
| Package Type | SOT439A |
