Renesas Electronics Corporation Single IGBTs RJP65T43DPQ-A0#T2

Description
IGBT Trench 650V 60A 150W Through Hole TO-247A
Request a Quote Datasheet
Description
IGBT Trench 650V 60A 150W Through Hole TO-247A
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - RJP65T43DPQ-A0#T2-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench 650V 60A 150W Through Hole TO-247A

IGBT Trench 650V 60A 150W Through Hole TO-247A

Buy Now Datasheet
 - RJP65T43DPQ-A0#T2 - Rochester Electronics
Newburyport, MA, United States
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - RJP65T43DPQ-A0#T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
RJP65T43DPQ-A0#T2
Discrete Semiconductor Products - Transistors - IGBTs RJP65T43DPQ-A0#T2
IGBT TRENCH 650V 60A TO247A

IGBT TRENCH 650V 60A TO247A

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Bipolar RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number RJP65T43DPQ-A0#T2-ND RJP65T43DPQ-A0#T2 RJP65T43DPQ-A0#T2
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
TJ 175 C (347 F) 175 C (347 F)
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