Renesas Electronics Corporation Single IGBTs RJP65T43DPQ-A0#T2

Description
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
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Description
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - RJP65T43DPQ-A0#T2 - Rochester Electronics
Newburyport, MA, United States
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

Supplier's Site Datasheet
Single IGBTs - RJP65T43DPQ-A0#T2-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench 650V 60A 150W Through Hole TO-247A

IGBT Trench 650V 60A 150W Through Hole TO-247A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - RJP65T43DPQ-A0#T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
RJP65T43DPQ-A0#T2
Discrete Semiconductor Products - Transistors - IGBTs RJP65T43DPQ-A0#T2
IGBT TRENCH 650V 60A TO247A

IGBT TRENCH 650V 60A TO247A

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number RJP65T43DPQ-A0#T2 RJP65T43DPQ-A0#T2-ND RJP65T43DPQ-A0#T2
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
Package Type TO-247; TO-247A TO-247; TO-247-3
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