Renesas Electronics Corporation RJK0366DSP-00#J0

Description
Power Field-Effect Transistor
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Description
Power Field-Effect Transistor
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Datasheet
Datasheet Summary
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Silicon N-channel power MOSFET for power switching, packaged in an SOP-8 (PRSP0008DD-D) with dimensions of 4.90 mm x 3.95 mm and a mass of 0.085 g. It has a drain-to-source voltage rating of 30 V, continuous drain current of 11 A, and on-resistance of 9.0 mΩ at 10 V gate drive. The device supports gate drive down to 4.5 V and meets Pb-free standards. Package is compatible with standard FR4 PCBs.

Datasheet Summary
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Silicon N-channel power MOSFET for power switching, packaged in an SOP-8 (PRSP0008DD-D) with dimensions of 4.90 mm x 3.95 mm and a mass of 0.085 g. It has a drain-to-source voltage rating of 30 V, continuous drain current of 11 A, and on-resistance of 9.0 mΩ at 10 V gate drive. The device supports gate drive down to 4.5 V and meets Pb-free standards. Package is compatible with standard FR4 PCBs.

Suppliers

Company
Product
Description
Supplier Links
 - RJK0366DSP-00#J0 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number RJK0366DSP-00#J0
Package Type DIP8
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