Renesas Electronics Corporation RJL5013DPP-E0#T2

The RJL5013DPP is a silicon N-channel MOSFET designed for high-speed power switching, featuring a built-in fast recovery diode and low on-resistance. It is packaged in a TO-220FN case with dimensions of 10 ± 0.3 mm in length, 5.6 mm in width, and 3.0 ± 0.3 mm in thickness, weighing 2.0 g. The device has a drain-to-source voltage rating of 500 V, a continuous drain current of 14 A, and a channel-to-case thermal impedance of 4.17 °C/W. It operates with a maximum channel temperature of 150 °C and a storage temperature range of -55 to +150 °C. Static drain-to-source on-state resistance is specified between 0.42 and 0.51 Ω at 7 A and 10 V gate-source voltage. The gate charge totals 37.6 nC, with a reverse recovery time of 150 ns for the body diode. The part is shipped in a tube with 1050 pieces per container.