Renesas Electronics Corporation RJK6035DPP-E3#T2

Description
Nch Single Power Mosfet 600V 6A
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Description
Nch Single Power Mosfet 600V 6A
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Datasheet
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The RJK6035DPP-E0 is a 600V, 6A N-channel MOSFET in a TO-220FP package, designed for high-speed power switching. It features a typical on-resistance of 1.1 Ω at 3A and 10V gate-source voltage, with a maximum drain current of 6A and a peak drain current of 24A under pulse conditions. The device has a channel-to-case thermal impedance of 4.23 °C/W and an avalanche energy rating of 1.65 mJ. It operates with a channel temperature limit of 150°C and a storage temperature range of -55°C to +150°C. The package dimensions are specified with a body length of 10.16 mm and a lead pitch of 2.54 mm, weighing 1.9 g. The part meets RoHS compliance and is rated for standard quality applications.

Datasheet Summary
Powered by GS/AI

The RJK6035DPP-E0 is a 600V, 6A N-channel MOSFET in a TO-220FP package, designed for high-speed power switching. It features a typical on-resistance of 1.1 Ω at 3A and 10V gate-source voltage, with a maximum drain current of 6A and a peak drain current of 24A under pulse conditions. The device has a channel-to-case thermal impedance of 4.23 °C/W and an avalanche energy rating of 1.65 mJ. It operates with a channel temperature limit of 150°C and a storage temperature range of -55°C to +150°C. The package dimensions are specified with a body length of 10.16 mm and a lead pitch of 2.54 mm, weighing 1.9 g. The part meets RoHS compliance and is rated for standard quality applications.

Suppliers

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Product
Description
Supplier Links
 - RJK6035DPP-E3#T2 - Rochester Electronics
Newburyport, MA, United States
Nch Single Power Mosfet 600V 6A

Nch Single Power Mosfet 600V 6A

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number RJK6035DPP-E3#T2
Package Type TO-220; TO-220-3
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