Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJL60S5DPP-E0#T2 RJL60S5DPP-E0#T2

The RJL60S5DPP-E0 is a 600V superjunction MOSFET with a built-in fast recovery diode, designed for high-speed power switching applications. It is packaged in a TO-220FP case, measuring 10.16mm x 8.66mm, with a mass of 1.9g. The device has a typical on-resistance of 0.15Ω at 10A and 10V gate-source voltage, and a reverse recovery time of 170ns for the body-diode. It supports a continuous drain current of 20A at 25°C case temperature and handles peak drain currents up to 40A. The transistor is rated for channel-to-case thermal impedance of 3.7°C/W and a maximum channel temperature of 150°C. It meets RoHS standards and is suitable for industrial and consumer electronics applications within its specified operating range.