Power Field-Effect Transistor
N-Channel 60V 110A (Ta) 200W (Tc) Through Hole TO-220AB
Manufacturer: Renesas Electronics America
Win Source Part Number: 1092282-RJK0601DPN-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 110A (Ta)
Max Gate Charge: 141nC @ 10V
Max Input Capacitance: 10000pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.1 mOhm @ 55A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
RJK0601DPN - N-CHANNEL MOSFET 60
| Rochester Electronics | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RJK0601DPN-E0#T2 | RJK0601DPN-E0#T2-ND | 1092282-RJK0601DPN-E0#T2 | RJK0601DPN-E0#T2 | RJK0601DPN-E0#T2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK0601DPN-E0#T2 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | |
| Packing Method | Tube; Tube | Rail; Tube; Tube/Rail | Bulk; Bulk | ||
| Polarity | N-Channel | N-Channel; N-Channel |
