Renesas Electronics Corporation Single IGBTs RJH60F4DPQ-A0#T0

RJH60F4DPQ-A0 - Insulated Gate Bipolar Transistor

IGBT Trench 600V 60A 235.8W Through Hole TO-247A

Manufacturer: Renesas Electronics America
Win Source Part Number: 793207-RJH60F4DPQ-A0#T0
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Power - Max: 235.8W
Reverse Recovery Time (trr): 90ns
IGBT Type: Trench
Input Type: Standard
Td (on/off) @ 25°C: 45ns/85ns
Test Condition: 400V, 30A, 5 Ohm, 15V
Family Name: RJH60F4DPQ-A0
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-247A
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 1.82V @ 15V, 30A
Alternative Parts (Cross-Reference): RGCL60TS60C11; RGCL60TS60DC11; NGTB30N60FLWG; APT30GS60BRDLG;
Introduction Date: April 05, 2011
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

IGBT 600V 60A 235.8W TO247A Product overview: RJH60F4DPQ-A0#T0 from Renesas Electronics Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A, 235.8W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A, 235.8W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RJH60F4DPQ-A0#T0 can be used for catalog matching and distributor lookup.