Renesas Electronics Corporation RJP4007ANS-WS

N-channel IGBT for strobe flash applications in a VSON-8 surface mount package measuring 3.00 mm by 4.40 mm, rated for a collector-emitter voltage of 400 V and a pulse collector current of 150 A, with a gate-emitter threshold voltage of 0.4 to 1.2 V and saturation voltage of 4.5 to 9.0 V at 150 A and 2.5 V gate drive. Operating junction and storage temperatures range from -40°C to +150°C. The device meets RoHS standards and is designed for use in camera strobe circuits with a maximum dv/dt of 400 V/μs during turn-off.