Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single RJK1002DPN-A0#T2

Description
Win Source Part Number: 1196522-RJK1002DPN-A 0#T2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 150W (Ta) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220ABA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: 559-RJK1002DPN-A0#T2 ,-1161-RJK1002DPN-A0 #T2 Base Product Number: RJK1002 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1196522-RJK1002DPN-A 0#T2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 150W (Ta) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220ABA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: 559-RJK1002DPN-A0#T2 ,-1161-RJK1002DPN-A0 #T2 Base Product Number: RJK1002 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1196522-RJK1002DPN-A0#T2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1196522-RJK1002DPN-A0#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1196522-RJK1002DPN-A0#T2
Win Source Part Number: 1196522-RJK1002DPN-A 0#T2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 150W (Ta) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220ABA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V Vgs (Max): ±20V Temperature Range - Operating: 150°C ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Renesas Electronics America Inc Other Names: 559-RJK1002DPN-A0#T2 ,-1161-RJK1002DPN-A0 #T2 Base Product Number: RJK1002 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1196522-RJK1002DPN-A0#T2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Ta)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220ABA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: 559-RJK1002DPN-A0#T2,-1161-RJK1002DPN-A0#T2
Base Product Number: RJK1002
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 559-RJK1002DPN-A0#T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-RJK1002DPN-A0#T2-ND
Single FETs, MOSFETs 559-RJK1002DPN-A0#T2-ND
N-Channel 100V 70A (Ta) 150W (Ta) Through Hole TO-220ABA

N-Channel 100V 70A (Ta) 150W (Ta) Through Hole TO-220ABA

Buy Now Datasheet
 - RJK1002DPN-A0#T2 - Rochester Electronics
Newburyport, MA, United States
RJK1002DPN-A0 - N-Channel MOSFET 100V, 70A

RJK1002DPN-A0 - N-Channel MOSFET 100V, 70A

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RJK1002DPN-A0#T2 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RJK1002DPN-A0#T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RJK1002DPN-A0#T2
MOSFET N-CH 100V 70A TO220ABA

MOSFET N-CH 100V 70A TO220ABA

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1196522-RJK1002DPN-A0#T2 559-RJK1002DPN-A0#T2-ND RJK1002DPN-A0#T2 RJK1002DPN-A0#T2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
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