Nexperia B.V. Single FETs, MOSFETs PSMN7R8-120ESQ

Description
N-Channel 120V 70A (Tc) 349W (Tc) Through Hole I2PAK
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Description
N-Channel 120V 70A (Tc) 349W (Tc) Through Hole I2PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - 1727-1509-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1509-ND
Single FETs, MOSFETs 1727-1509-ND
N-Channel 120V 70A (Tc) 349W (Tc) Through Hole I2PAK

N-Channel 120V 70A (Tc) 349W (Tc) Through Hole I2PAK

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN7R8-120ESQ - 792637-PSMN7R8-120ESQ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN7R8-120ESQ
792637-PSMN7R8-120ESQ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN7R8-120ESQ 792637-PSMN7R8-120ESQ
Manufacturer: Nexperia USA Inc. Win Source Part Number: 792637-PSMN7R8-120ES Q Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Family Name: PSMN7R8-120ES Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 120V Vgs(th) (Maximum) @ Id: 4V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 167nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9473pF @ 60V Vgs (Maximum): ±20V Power Dissipation (Maximum): 349W (Tc) Rds On (Maximum) @ Id, Vgs: 7.9 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): PSMN7R8-120ES; ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 792637-PSMN7R8-120ESQ
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Family Name: PSMN7R8-120ES
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 120V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 167nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 9473pF @ 60V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 349W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.9 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): PSMN7R8-120ES;
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET N-channel 120 V 7.9 mo FET

MOSFET N-channel 120 V 7.9 mo FET

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1727-1509-ND 792637-PSMN7R8-120ESQ PSMN7R8-120ESQ
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN7R8-120ESQ MOSFET
Polarity N-Channel
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