Nexperia B.V. N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 PSMN2R3-100SSEJ

Description
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. PSMN2R3-100SSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation Low RDSon for low I2R conduction losses LFPAK88 package for applications that demand the highest performance and reliability Applications Hot swap Load switch Soft start E-fuse Telecommunication systems based on a 48 V backplane/supply rail
  • N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 - PSMN2R3-100SSEJ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - PSMN2R3-100SSEJ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJCT-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. PSMN2R3-100SSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation Low RDSon for low I2R conduction losses LFPAK88 package for applications that demand the highest performance and reliability Applications Hot swap Load switch Soft start E-fuse Telecommunication systems based on a 48 V backplane/supply rail
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 - PSMN2R3-100SSEJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88
PSMN2R3-100SSEJ
N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 PSMN2R3-100SSEJ
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. PSMN2R3-100SSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation Low RDSon for low I2R conduction losses LFPAK88 package for applications that demand the highest performance and reliability Applications Hot swap Load switch Soft start E-fuse Telecommunication systems based on a 48 V backplane/supply rail

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.

PSMN2R3-100SSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON.

Features and benefits

  • Fully optimized Safe Operating Area (SOA) for superior linear mode operation
  • Low RDSon for low I2R conduction losses
  • LFPAK88 package for applications that demand the highest performance and reliability

Applications

  • Hot swap
  • Load switch
  • Soft start
  • E-fuse
  • Telecommunication systems based on a 48 V backplane/supply rail
Supplier's Site Datasheet
Single FETs, MOSFETs - PSMN2R3-100SSEJ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PSMN2R3-100SSEJ
Single FETs, MOSFETs PSMN2R3-100SSEJ
APPLICATION SPECIFIC POWER MOSFE

APPLICATION SPECIFIC POWER MOSFE

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R3-100SSEJDKR-ND
Single FETs, MOSFETs 1727-PSMN2R3-100SSEJDKR-ND
APPLICATION SPECIFIC POWER MOSFE

APPLICATION SPECIFIC POWER MOSFE

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R3-100SSEJTR-ND
Single FETs, MOSFETs 1727-PSMN2R3-100SSEJTR-ND
APPLICATION SPECIFIC POWER MOSFE

APPLICATION SPECIFIC POWER MOSFE

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R3-100SSEJCT-ND
Single FETs, MOSFETs 1727-PSMN2R3-100SSEJCT-ND
APPLICATION SPECIFIC POWER MOSFE

APPLICATION SPECIFIC POWER MOSFE

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PSMN2R3-100SSEJ PSMN2R3-100SSEJ 1727-PSMN2R3-100SSEJDKR-ND
Product Name N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 Single FETs, MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
Package Type SOT1235 SOT123; SOT-1235 SOT-1235
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
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