Nexperia B.V. N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 PSMN2R3-100SSEJ

Description
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. PSMN2R3-100SSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation Low RDSon for low I2R conduction losses LFPAK88 package for applications that demand the highest performance and reliability Applications Hot swap Load switch Soft start E-fuse Telecommunication systems based on a 48 V backplane/supply rail
  • N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 - PSMN2R3-100SSEJ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - PSMN2R3-100SSEJ - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. PSMN2R3-100SSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation Low RDSon for low I2R conduction losses LFPAK88 package for applications that demand the highest performance and reliability Applications Hot swap Load switch Soft start E-fuse Telecommunication systems based on a 48 V backplane/supply rail
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 - PSMN2R3-100SSEJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88
PSMN2R3-100SSEJ
N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 PSMN2R3-100SSEJ
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. PSMN2R3-100SSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation Low RDSon for low I2R conduction losses LFPAK88 package for applications that demand the highest performance and reliability Applications Hot swap Load switch Soft start E-fuse Telecommunication systems based on a 48 V backplane/supply rail

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.

PSMN2R3-100SSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum efficiency when turned fully ON.

Features and benefits

  • Fully optimized Safe Operating Area (SOA) for superior linear mode operation
  • Low RDSon for low I2R conduction losses
  • LFPAK88 package for applications that demand the highest performance and reliability

Applications

  • Hot swap
  • Load switch
  • Soft start
  • E-fuse
  • Telecommunication systems based on a 48 V backplane/supply rail
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R3-100SSEJDKR-ND
Single FETs, MOSFETs 1727-PSMN2R3-100SSEJDKR-ND
APPLICATION SPECIFIC POWER MOSFE

APPLICATION SPECIFIC POWER MOSFE

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R3-100SSEJTR-ND
Single FETs, MOSFETs 1727-PSMN2R3-100SSEJTR-ND
APPLICATION SPECIFIC POWER MOSFE

APPLICATION SPECIFIC POWER MOSFE

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R3-100SSEJCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R3-100SSEJCT-ND
Single FETs, MOSFETs 1727-PSMN2R3-100SSEJCT-ND
APPLICATION SPECIFIC POWER MOSFE

APPLICATION SPECIFIC POWER MOSFE

Buy Now Datasheet
Single FETs, MOSFETs - PSMN2R3-100SSEJ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PSMN2R3-100SSEJ
Single FETs, MOSFETs PSMN2R3-100SSEJ
APPLICATION SPECIFIC POWER MOSFE

APPLICATION SPECIFIC POWER MOSFE

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN2R3-100SSEJ 1727-PSMN2R3-100SSEJDKR-ND PSMN2R3-100SSEJ
Product Name N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 Single FETs, MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts 100 volts
IDSS 255000 milliamps 255000 milliamps
VGS(off) 20 volts
PD 341 milliwatts 341000 milliwatts
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