Nexperia B.V. Single FETs, MOSFETs PSMN2R4-30MLD/2X

N-channel 30 V logic level MOSFET in LFPAK33 (SOT1210) package with 2.4 mΩ on-state resistance at 10 V gate drive, designed for high-efficiency DC-DC conversion and synchronous rectification. The device features SchottkyPlus technology with <1 µA leakage at 25 °C, soft-recovery switching, low EMI, and is rated for 70 A continuous drain current and 91 W power dissipation. Junction temperature range is -55 °C to 175 °C, with thermal resistance from junction to mounting base of 1.44-1.65 K/W. The package uses exposed leads and clip bonding for high reliability, and meets IEC 60134 absolute maximum ratings. It is optimized for 4.5 V gate drive and qualified to 175 °C.