Nexperia B.V. Single FETs, MOSFETs PSMN2R5-40YLD/2X

N-channel 40 V logic level MOSFET with 2.6 mΩ drain-source on-state resistance and 160 A continuous drain current capability, housed in an LFPAK56 (SOT669) package rated for 175 °C junction temperature. The device features NextPower-S3 Schottky-Plus technology, providing low gate charge, soft body-diode recovery, and avalanche ruggedness with 100% I_AS testing at 150 A. Optimized for 4.5 V gate drive and high-efficiency switching in applications such as synchronous rectification, DC-DC conversion, and battery protection.