Nexperia B.V. N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology PSMN2R5-40YLD/2X

Description
160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. Features and benefits 160 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 150 A Strong SOA (linear-mode) rating NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications High-performance synchronous rectification DC-to-DC converters Brushless DC motor control Battery protection Load-switch and eFuse
  • N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology - PSMN2R5-40YLD/2X - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PSMN2R5-40YLD/2XTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. Features and benefits 160 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 150 A Strong SOA (linear-mode) rating NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications High-performance synchronous rectification DC-to-DC converters Brushless DC motor control Battery protection Load-switch and eFuse
Request a Quote Datasheet

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N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology - PSMN2R5-40YLD/2X - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology
PSMN2R5-40YLD/2X
N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology PSMN2R5-40YLD/2X
160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. Features and benefits 160 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 150 A Strong SOA (linear-mode) rating NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' Low QRR, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance Applications High-performance synchronous rectification DC-to-DC converters Brushless DC motor control Battery protection Load-switch and eFuse

160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

Features and benefits

  • 160 A continuous ID(max) rating
  • Avalanche rated, 100% tested at IAS = 150 A
  • Strong SOA (linear-mode) rating
  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
  • Low QRR, QG and QGD for high system efficiency and low EMI designs
  • Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
  • Low parasitic inductance and resistance

Applications

  • High-performance synchronous rectification
  • DC-to-DC converters
  • Brushless DC motor control
  • Battery protection
  • Load-switch and eFuse
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN2R5-40YLD/2XTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R5-40YLD/2XTR-ND
Single FETs, MOSFETs 1727-PSMN2R5-40YLD/2XTR-ND
PSMN2R5-40YLD/SOT669 /LFPAK

PSMN2R5-40YLD/SOT669/LFPAK

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Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PSMN2R5-40YLD/2X 1727-PSMN2R5-40YLD/2XTR-ND
Product Name N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
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