N-channel 30 V, 2.2 mΩ ASFET for hotswap with enhanced safe operating area in LFPAK56 package, optimized for low R_DSon and high current handling in hot-swap, inrush, and linear-mode applications. The device supports a continuous drain current of up to 160 A at 25 °C mounting base temperature, with a maximum power dissipation of 124 W. Its drain-source on-state resistance is 1.87 mΩ typical at 10 V gate-source voltage and 25 °C. The LFPAK56 package has a 30 mm² footprint, features copper-clip technology for low parasitic inductance and resistance, and is qualified to 175 °C junction temperature. Peak drain and source currents reach 672 A for pulses up to 10 µs. Non-repetitive avalanche energy is rated at 309 mJ. The device exhibits low gate-drain charge (typical 6 nC) and total gate charge (typical 17 nC).
N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.
Features and benefits
Applications
N-Channel MOSFET, 30V, 2.1A, SOT-23
N-Channel MOSFET, 30V, 2.1A, SOT-23
PSMN2R1-30YLE/SOT669
PSMN2R1-30YLE/SOT669
PSMN2R1-30YLE/SOT669
MOSFET, N-CH, 30V, 160A, SOT-669 ROHS COMPLIANT: YES
| Nexperia B.V. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PSMN2R1-30YLEX | 219389 | 1727-PSMN2R1-30YLEXDKR-ND | 62AK1907 |
| Product Name | N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 160A, Sot-669 Rohs Compliant Nexperia |
| Package Type | SOT669 SOT669 | LFPAK | SC-100, SOT-669 | TO-3 |
