Nexperia B.V. N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN2R4-30YLD/2X

Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
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Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control
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Suppliers

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Product
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Supplier Links
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology - PSMN2R4-30YLD/2X - Nexperia B.V.
Nijmegen, Netherlands
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
PSMN2R4-30YLD/2X
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN2R4-30YLD/2X
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC-to-DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN2R4-30YLD/2XTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R4-30YLD/2XTR-ND
Single FETs, MOSFETs 1727-PSMN2R4-30YLD/2XTR-ND
PSMN2R4-30YLD/SOT669 /LFPAK

PSMN2R4-30YLD/SOT669/LFPAK

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Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PSMN2R4-30YLD/2X 1727-PSMN2R4-30YLD/2XTR-ND
Product Name N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
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