Dual standard level N-channel MOSFET in an LFPAK56D (SOT1205) package using TrenchMOS technology, rated for 40 V drain-source voltage and 64 W total power dissipation at 25 °C mounting base temperature, with a maximum junction temperature of 175 °C. The device features a typical on-state resistance of 5.8 mΩ at 25 °C and 11 mΩ at 175 °C, and is rated for a single-pulse avalanche energy of 130 mJ. It is qualified to 175 °C and employs a copper-clip, solder die attach construction for high reliability.
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.
Features and benefits
Applications
MOSFET 2N-CH 40V 40A LFPAK56D
MOSFET 2N-CH 40V 40A LFPAK56D
MOSFET 2N-CH 40V 40A LFPAK56D
MOSFET, N-CH, 40V, 40A, LFPAK56D ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PSMN6R8-40HSX | 1727-PSMN6R8-40HSXDKR-ND | 61AK9910 |
| Product Name | N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | FET, MOSFET Arrays | Mosfet, N-Ch, 40V, 40A, Lfpak56D Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | 40 volts | ||
| IDSS | 40000 milliamps | ||
| VGS(off) | 20 volts |
