Nexperia B.V. Bipolar Transistor Arrays, Pre-Biased PUMB3HX

PNP/PNP resistor-equipped double transistor with 50 V collector-emitter voltage and 100 mA output current capability, featuring built-in 4.7 kΩ bias resistors and no R2 resistor, housed in a TSSOP6 (SOT363) package measuring 2.1 mm × 1.25 mm × 0.95 mm. Maximum junction temperature is 175 °C, with total power dissipation up to 360 mW per device. Complies with IEC 60134 absolute maximum rating system.