Nexperia B.V. Single FETs, MOSFETs PSMN1R5-40YSD/2X

N-channel 40 V, 1.5 mΩ, 240 A MOSFET in LFPAK56 (SOT669) package using NextPower-S3 Schottky-Plus technology, rated for continuous drain current of 240 A at 25 °C and total power dissipation of 238 W. The device features avalanche ruggedness with 100% tested I_AS of 190 A, low R_DSon of 1.3 to 1.5 mΩ at 25 °C, and a Schottky-Plus body diode with soft recovery. It operates with a junction temperature range of -55 °C to 175 °C and meets IEC 60134 absolute maximum ratings. The exposed-pad surface-mount package supports wave and reflow soldering with low parasitic inductance and resistance.