Nexperia B.V. 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kOhm, R2 = 22 kOhm PUMD17,115

Description
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH17 PNP/PNP complement: PUMB17 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost AEC-Q101 qualified Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications
Request a Quote Datasheet
Description
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH17 PNP/PNP complement: PUMB17 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost AEC-Q101 qualified Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kOhm, R2 = 22 kOhm - PUMD17,115 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kOhm, R2 = 22 kOhm
PUMD17,115
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kOhm, R2 = 22 kOhm PUMD17,115
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH17 PNP/PNP complement: PUMB17 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost AEC-Q101 qualified Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications

NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PUMH17

PNP/PNP complement: PUMB17

Features and benefits

  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place cost
  • AEC-Q101 qualified

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replacement of general-purpose transistors in digital applications
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD17,115TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD17,115TR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD17,115TR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD17,115CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD17,115CT-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD17,115CT-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD17,115DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD17,115DKR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD17,115DKR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMD17,115 - 1090710-PUMD17,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMD17,115
1090710-PUMD17,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMD17,115 1090710-PUMD17,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1090710-PUMD17,115 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: 6-TSSOP Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 500μA, 10mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 60 @ 5mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1090710-PUMD17,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-TSSOP
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 60 @ 5mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - PUMD17,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Supplier's Site Datasheet
Transistor, Digital, Dual, Sot-363; Transistor Polarity Nexperia - 92K8288 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Digital, Dual, Sot-363; Transistor Polarity Nexperia
92K8288
Transistor, Digital, Dual, Sot-363; Transistor Polarity Nexperia 92K8288
TRANSISTOR, DIGITAL, DUAL, SOT-363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:60hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes

TRANSISTOR, DIGITAL, DUAL, SOT-363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:60hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics Rochester Electronics Newark, An Avnet Company
Product Category Transistors Transistors Transistors Bipolar RF Transistors Transistors
Product Number PUMD17,115 1727-PUMD17,115TR-ND 1090710-PUMD17,115 PUMD17,115 92K8288
Product Name 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kOhm, R2 = 22 kOhm Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMD17,115 Transistor, Digital, Dual, Sot-363; Transistor Polarity Nexperia
Polarity Complementary NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual) NPN; PNP
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