Nexperia B.V. 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PUMD10-QF

Description
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB10-Q NPN/NPN complement: PUMH10-Q Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
  • 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ - PUMD10-QF - Nexperia B.V.
    Nexperia B.V.
  • PUMD10-QF - Rochester Electronics
    Rochester Electronics
  • Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD10-QFTR-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD10-QFDKR-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD10-QFCT-ND - DigiKey
    DigiKey
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Description
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB10-Q NPN/NPN complement: PUMH10-Q Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
Request a Quote
Datasheet
Datasheet Summary
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50 V, 100 mA NPN/PNP resistor-equipped double transistor in a SOT363-3 (SC-88) surface-mounted package with built-in bias resistors R1 = 2.2 kΩ and R2 = 47 kΩ, qualified to AEC-Q101 for automotive applications, capable of 100 mA output current and 300 mW total power dissipation at 25 °C ambient temperature.

Datasheet Summary
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50 V, 100 mA NPN/PNP resistor-equipped double transistor in a SOT363-3 (SC-88) surface-mounted package with built-in bias resistors R1 = 2.2 kΩ and R2 = 47 kΩ, qualified to AEC-Q101 for automotive applications, capable of 100 mA output current and 300 mW total power dissipation at 25 °C ambient temperature.

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50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ - PUMD10-QF - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PUMD10-QF
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ PUMD10-QF
NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB10-Q NPN/NPN complement: PUMH10-Q Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications

NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

PNP/PNP complement: PUMB10-Q

NPN/NPN complement: PUMH10-Q

Features and benefits

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications
Supplier's Site Datasheet
- PUMD10-QF - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PUMD10-QF
PUMD10-QF
NPN/PNP double Resistor-Equipped Transistor

NPN/PNP double Resistor-Equipped Transistor

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD10-QFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD10-QFTR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD10-QFTR-ND
TRANS PREBIAS 1NPN 1PNP 6-TSSOP

TRANS PREBIAS 1NPN 1PNP 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD10-QFDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD10-QFDKR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD10-QFDKR-ND
TRANS PREBIAS 1NPN 1PNP 6-TSSOP

TRANS PREBIAS 1NPN 1PNP 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD10-QFCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD10-QFCT-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD10-QFCT-ND
TRANS PREBIAS 1NPN 1PNP 6-TSSOP

TRANS PREBIAS 1NPN 1PNP 6-TSSOP

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey
Product Category Transistors RF Transistors Transistors
Product Number PUMD10-QF PUMD10-QF 1727-PUMD10-QFTR-ND
Product Name 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Bipolar Transistor Arrays, Pre-Biased
Package Type SOT363-3 SOT363-3 SOT363 6-TSSOP, SC-88, SOT-363
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