Nexperia B.V. N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology PSMN2R8-40YSBX

Description
160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. Features and benefits Optimized for improved EMC Performance 160 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 150 A Strong SOA (linear-mode) rating NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability Low parasitic inductance and resistance Applications Automation, control and instrumentation Autonomous systems, Robotics and Cobots DC-to-DC converters Brushless DC motor control Brushed motors Battery isolation Industrial load-switch and eFuse Inrush management, hotswap
  • N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology - PSMN2R8-40YSBX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PSMN2R8-40YSBXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN2R8-40YSBXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN2R8-40YSBXTR-ND - DigiKey
    DigiKey
  • MOSFETs - 219395 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 219397 - RS Components, Ltd.
    RS Components, Ltd.
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Description
160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. Features and benefits Optimized for improved EMC Performance 160 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 150 A Strong SOA (linear-mode) rating NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability Low parasitic inductance and resistance Applications Automation, control and instrumentation Autonomous systems, Robotics and Cobots DC-to-DC converters Brushless DC motor control Brushed motors Battery isolation Industrial load-switch and eFuse Inrush management, hotswap
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Datasheet
Datasheet Summary
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N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in the LFPAK56 (SOT669) package, using NextPowerS3 Schottky-Plus technology, with a junction temperature rating of 175 °C, continuous drain current of 160 A at 25 °C, drain-source on-state resistance of 2.4 to 2.8 mΩ at 25 °C, avalanche current rating of 150 A, and peak pulsed drain current of 658 A. The device features a Schottky-Plus body diode with soft recovery, low gate charge, and is qualified to 175 °C with copper-clip and solder die attach for high board-level reliability.

Datasheet Summary
Powered by GS/AI

N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in the LFPAK56 (SOT669) package, using NextPowerS3 Schottky-Plus technology, with a junction temperature rating of 175 °C, continuous drain current of 160 A at 25 °C, drain-source on-state resistance of 2.4 to 2.8 mΩ at 25 °C, avalanche current rating of 150 A, and peak pulsed drain current of 658 A. The device features a Schottky-Plus body diode with soft recovery, low gate charge, and is qualified to 175 °C with copper-clip and solder die attach for high board-level reliability.

Suppliers

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Product
Description
Supplier Links
N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology - PSMN2R8-40YSBX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology
PSMN2R8-40YSBX
N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology PSMN2R8-40YSBX
160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. Features and benefits Optimized for improved EMC Performance 160 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 150 A Strong SOA (linear-mode) rating NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability Low parasitic inductance and resistance Applications Automation, control and instrumentation Autonomous systems, Robotics and Cobots DC-to-DC converters Brushless DC motor control Brushed motors Battery isolation Industrial load-switch and eFuse Inrush management, hotswap

160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.

Features and benefits

  • Optimized for improved EMC Performance
  • 160 A continuous ID(max) rating
  • Avalanche rated, 100% tested at IAS = 150 A
  • Strong SOA (linear-mode) rating
  • NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery'
  • Low Qrr, QG and QGD for high system efficiency and low EMI designs
  • Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability
  • Low parasitic inductance and resistance

Applications

  • Automation, control and instrumentation
  • Autonomous systems, Robotics and Cobots
  • DC-to-DC converters
  • Brushless DC motor control
  • Brushed motors
  • Battery isolation
  • Industrial load-switch and eFuse
  • Inrush management, hotswap
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN2R8-40YSBXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R8-40YSBXCT-ND
Single FETs, MOSFETs 1727-PSMN2R8-40YSBXCT-ND
PSMN2R8-40YSB/SOT669 /LFPAK

PSMN2R8-40YSB/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R8-40YSBXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R8-40YSBXDKR-ND
Single FETs, MOSFETs 1727-PSMN2R8-40YSBXDKR-ND
PSMN2R8-40YSB/SOT669 /LFPAK

PSMN2R8-40YSB/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R8-40YSBXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R8-40YSBXTR-ND
Single FETs, MOSFETs 1727-PSMN2R8-40YSBXTR-ND
PSMN2R8-40YSB/SOT669 /LFPAK

PSMN2R8-40YSB/SOT669/LFPAK

Buy Now Datasheet
MOSFETs - 219395 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219395
MOSFETs 219395
N-Channel MOSFET, 40V, 2.8A, SOT-23

N-Channel MOSFET, 40V, 2.8A, SOT-23

Supplier's Site
MOSFETs - 219397 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219397
MOSFETs 219397
N-Channel MOSFET, 40V, 2.8A, SOT-23

N-Channel MOSFET, 40V, 2.8A, SOT-23

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN2R8-40YSBX 1727-PSMN2R8-40YSBXCT-ND 219395
Product Name N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Single FETs, MOSFETs MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 160000 milliamps
VGS(off) 20 volts
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