NextPower 80 V, 4.5 mΩ N-channel MOSFET in LFPAK56 package, rated for 100 A continuous drain current and 238 W total power dissipation at 25 °C mounting base temperature, with a junction temperature range of -55 °C to 175 °C. The device features a drain-source on-state resistance of 3.5 mΩ to 4.5 mΩ at 25 °C and 10 V gate drive, a non-repetitive avalanche energy rating of 278 mJ, and is RoHS compliant. It is qualified to 175 °C and suitable for industrial and consumer applications including synchronous rectification, motor control, and DC-DC conversion.
NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
Features and benefits
Applications
N-Channel MOSFET, 80V, 4.5A, SOT-23
N-Channel MOSFET, 80V, 4.5A, SOT-23
NEXTPOWER 80/100V MOSFETS
NEXTPOWER 80/100V MOSFETS
NEXTPOWER 80/100V MOSFETS
| Nexperia B.V. | RS Components, Ltd. | DigiKey | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | PSMN4R5-80YSFX | 219272 | 1727-PSMN4R5-80YSFXTR-ND |
| Product Name | NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 | MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | 80 volts | ||
| IDSS | 100000 milliamps | ||
| VGS(off) | 20 volts |
