Nexperia B.V. N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology PSMN2R2-40YSBX

Description
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. Features and benefits Optimized for improved EMC Performance 180 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 160 A Strong SOA (linear-mode) rating NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability Low parasitic inductance and resistance Applications Automation, control and instrumentation Autonomous systems, Robotics and Cobots DC-to-DC converters Brushless DC motor control Brushed motors Battery isolation Industrial load-switch and eFuse Inrush management, hotswap
  • N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology - PSMN2R2-40YSBX - Nexperia B.V.
    Nexperia B.V.
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    DigiKey
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Description
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. Features and benefits Optimized for improved EMC Performance 180 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 160 A Strong SOA (linear-mode) rating NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability Low parasitic inductance and resistance Applications Automation, control and instrumentation Autonomous systems, Robotics and Cobots DC-to-DC converters Brushless DC motor control Brushed motors Battery isolation Industrial load-switch and eFuse Inrush management, hotswap
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Datasheet
Datasheet Summary
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N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 (SOT669) package, rated for 175 °C junction temperature, using NextPowerS3 Schottky-Plus technology with optimized EMC performance. Features include a 100% avalanche-tested I_AS of 160 A, low gate charge values (Q_G up to 69 nC, Q_GD up to 13.4 nC), and a Schottky-Plus body diode with soft recovery. The LFPAK56 package offers exposed leads for wave soldering, copper-clip die attach, and low parasitic inductance and resistance. Devices are rated for continuous drain current of 180 A at 25 °C mounting base temperature and support high-reliability applications in power switching, motor control, and eFuse systems.

Datasheet Summary
Powered by GS/AI

N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 (SOT669) package, rated for 175 °C junction temperature, using NextPowerS3 Schottky-Plus technology with optimized EMC performance. Features include a 100% avalanche-tested I_AS of 160 A, low gate charge values (Q_G up to 69 nC, Q_GD up to 13.4 nC), and a Schottky-Plus body diode with soft recovery. The LFPAK56 package offers exposed leads for wave soldering, copper-clip die attach, and low parasitic inductance and resistance. Devices are rated for continuous drain current of 180 A at 25 °C mounting base temperature and support high-reliability applications in power switching, motor control, and eFuse systems.

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology - PSMN2R2-40YSBX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology
PSMN2R2-40YSBX
N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology PSMN2R2-40YSBX
180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. Features and benefits Optimized for improved EMC Performance 180 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 160 A Strong SOA (linear-mode) rating NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability Low parasitic inductance and resistance Applications Automation, control and instrumentation Autonomous systems, Robotics and Cobots DC-to-DC converters Brushless DC motor control Brushed motors Battery isolation Industrial load-switch and eFuse Inrush management, hotswap

180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.

Features and benefits

  • Optimized for improved EMC Performance
  • 180 A continuous ID(max) rating
  • Avalanche rated, 100% tested at IAS = 160 A
  • Strong SOA (linear-mode) rating
  • NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery'
  • Low Qrr, QG and QGD for high system efficiency and low EMI designs
  • Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability
  • Low parasitic inductance and resistance

Applications

  • Automation, control and instrumentation
  • Autonomous systems, Robotics and Cobots
  • DC-to-DC converters
  • Brushless DC motor control
  • Brushed motors
  • Battery isolation
  • Industrial load-switch and eFuse
  • Inrush management, hotswap
Supplier's Site Datasheet
MOSFETs - 219519 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219519
MOSFETs 219519
N-Channel MOSFET, 40V, 2.2A, SOT-23

N-Channel MOSFET, 40V, 2.2A, SOT-23

Supplier's Site
MOSFETs - 219520 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219520
MOSFETs 219520
N-Channel MOSFET, 40V, 2.2A, SOT-23

N-Channel MOSFET, 40V, 2.2A, SOT-23

Supplier's Site
Single FETs, MOSFETs - 1727-PSMN2R2-40YSBXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R2-40YSBXDKR-ND
Single FETs, MOSFETs 1727-PSMN2R2-40YSBXDKR-ND
PSMN2R2-40YSB/SOT669 /LFPAK

PSMN2R2-40YSB/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R2-40YSBXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R2-40YSBXTR-ND
Single FETs, MOSFETs 1727-PSMN2R2-40YSBXTR-ND
PSMN2R2-40YSB/SOT669 /LFPAK

PSMN2R2-40YSB/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN2R2-40YSBXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN2R2-40YSBXCT-ND
Single FETs, MOSFETs 1727-PSMN2R2-40YSBXCT-ND
PSMN2R2-40YSB/SOT669 /LFPAK

PSMN2R2-40YSB/SOT669/LFPAK

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. RS Components, Ltd. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PSMN2R2-40YSBX 219519 1727-PSMN2R2-40YSBXDKR-ND
Product Name N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 180000 milliamps
VGS(off) 20 volts
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