Nexperia B.V. N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN1R0-30YLD/2X

Description
300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits 300 Amp capability Avalanche rated, 100 % tested at I(as) = 190 Amps Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing
  • N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology - PSMN1R0-30YLD/2X - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PSMN1R0-30YLD/2XTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN1R0-30YLD/2XDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN1R0-30YLD/2XCT-ND - DigiKey
    DigiKey
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Description
300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits 300 Amp capability Avalanche rated, 100 % tested at I(as) = 190 Amps Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing
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Datasheet
Datasheet Summary
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N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 package using NextPowerS3 technology with SchottkyPlus technology for low leakage and high efficiency. The device has a maximum drain-source voltage of 30 V, continuous drain current of 300 A at 25 °C, and total power dissipation of 238 W. It features a drain-source on-state resistance of 1.0 mΩ at 4.5 V gate drive and 25 °C, gate-source threshold voltage of 1.2 to 2.2 V, and is qualified to 175 °C junction temperature. The LFPAK56 (SOT669) package is clip-bonded, solder die-attached, wave solderable, and exposed for visual inspection. It is avalanche rated with 190 A I(as) tested at 100%. The device is optimized for 4.5 V gate drive and suitable for server DC-DC, VRM, POL, and motor control applications.

Datasheet Summary
Powered by GS/AI

N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 package using NextPowerS3 technology with SchottkyPlus technology for low leakage and high efficiency. The device has a maximum drain-source voltage of 30 V, continuous drain current of 300 A at 25 °C, and total power dissipation of 238 W. It features a drain-source on-state resistance of 1.0 mΩ at 4.5 V gate drive and 25 °C, gate-source threshold voltage of 1.2 to 2.2 V, and is qualified to 175 °C junction temperature. The LFPAK56 (SOT669) package is clip-bonded, solder die-attached, wave solderable, and exposed for visual inspection. It is avalanche rated with 190 A I(as) tested at 100%. The device is optimized for 4.5 V gate drive and suitable for server DC-DC, VRM, POL, and motor control applications.

Suppliers

Company
Product
Description
Supplier Links
N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology - PSMN1R0-30YLD/2X - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology
PSMN1R0-30YLD/2X
N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN1R0-30YLD/2X
300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. Features and benefits 300 Amp capability Avalanche rated, 100 % tested at I(as) = 190 Amps Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies Superfast switching with soft-recovery; s-factor > 1 Low spiking and ringing for low EMI designs Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C Wave solderable; exposed leads for optimal visual solder inspection Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing

300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • 300 Amp capability
  • Avalanche rated, 100 % tested at I(as) = 190 Amps
  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC-to-DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control
  • Power OR-ing
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN1R0-30YLD/2XTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R0-30YLD/2XTR-ND
Single FETs, MOSFETs 1727-PSMN1R0-30YLD/2XTR-ND
PSMN1R0-30YLD/SOT669 /LFPAK

PSMN1R0-30YLD/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN1R0-30YLD/2XDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R0-30YLD/2XDKR-ND
Single FETs, MOSFETs 1727-PSMN1R0-30YLD/2XDKR-ND
PSMN1R0-30YLD/SOT669 /LFPAK

PSMN1R0-30YLD/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN1R0-30YLD/2XCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R0-30YLD/2XCT-ND
Single FETs, MOSFETs 1727-PSMN1R0-30YLD/2XCT-ND
PSMN1R0-30YLD/SOT669 /LFPAK

PSMN1R0-30YLD/SOT669/LFPAK

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PSMN1R0-30YLD/2X 1727-PSMN1R0-30YLD/2XTR-ND
Product Name N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 300000 milliamps
VGS(off) 20 volts
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